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3SK240

Toshiba Semiconductor
Part Number 3SK240
Manufacturer Toshiba Semiconductor
Description GaAs N-Channel Dual Gate MES Type FET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK240 3SK240 TV Tuner, UHF RF Amplifier Application...
Datasheet PDF File 3SK240 PDF File

3SK240
3SK240


Overview
TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK240 3SK240 TV Tuner, UHF RF Amplifier Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Gate 1-drain voltage Gate 2-drain voltage Gate 1-source voltage Gate 2-source voltage Gate 1 current Gate 2 current Power dissipation Channel temperature Storage temperature range Symbol VG1D0 VG2D0 VG1S VG2S IG1 IG2 PD Tch Tstg Rating -9 -9 -4 -4 1 1 150 125 -55~125 Unit V V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.
013 g (typ.
) Characteristics Gate 1 leakage current Gate 2 leakage current Drain current Gate 1-source cut-off voltage Gate 2-source c...



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