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2SK879

Part Number	2SK879
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Conde...
Datasheet	2SK879 PDF File

Overview

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications 2SK879 Unit: mm · High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.
0 nA (max) (VGS = −30 V) · Low noise: NF = 0.
5dB (typ.
) (RG = 100 kΩ, f = 120 Hz) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 100 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1B Weight: 0.
006 g (typ.
) Characteristics Symbol Test...

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