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2SK367

Toshiba Semiconductor
Part Number 2SK367
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Cu...
Datasheet PDF File 2SK367 PDF File

2SK367
2SK367

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Unit: mm • High breakdown voltage: VGDS = −100 V (min) • High input impedance: IGSS = −1.
0 nA (max) (VGS = −80 V) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg −100 10 200 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to dec...


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