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2SK366

Toshiba Semiconductor
Part Number 2SK366
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current an...
Datasheet PDF File 2SK366 PDF File

2SK366
2SK366

Overview
TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK366 Unit: mm · High voltage: VGDS = −40 V · High input impedance: IGSS = −1.
0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 50 Ω (typ.
) (IDSS = 5 mA) · Small package · Complementary to 2SJ107 Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -40 10 200 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.
13 g (typ.
) Characteristics ...


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