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2SK364

Toshiba Semiconductor
Part Number 2SK364
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Curr...
Datasheet PDF File 2SK364 PDF File

2SK364
2SK364

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK364 Unit: mm · High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.
0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 50 Ω (typ.
) (IDSS = 5 mA) · Complementary to 2SJ104 Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -40 10 400 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.
21 g (typ.
) Characte...


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