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2SK362

Part Number	2SK362
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Curr...
Datasheet	2SK362 PDF File

Overview

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK362 Unit: mm • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.
0 nA (max) (VGS = −30 V) • Low RDS (ON): RDS (ON) = 80 Ω (typ.
) (IDSS = 5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg −50 10 300 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change ...

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