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2SK3475

Toshiba Semiconductor
Part Number 2SK3475
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Uni...
Datasheet PDF File 2SK3475 PDF File

2SK3475
2SK3475

Overview
2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 630 mW (min) Gain: GP = 14.
9dB (min) Drain efficiency: ηD = 45% (min) · · · Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 1 3 150 −45~150 Unit V V A W °C °C Note 1: Tc = 25°C (When mounted on a 1.
6 mm glass epoxy PCB) JEDEC JEITA TOSHIBA ― SC-62 2-5K1D Marking Type name W B 1 2 3 1.
Gate 2.
Source 3.
Drain Caution Please take care to avoid generating static electricity...


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