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2SK3398

Toshiba Semiconductor
Part Number 2SK3398
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3398 Switching Regulator and DC-DC Conve...
Datasheet PDF File 2SK3398 PDF File

2SK3398
2SK3398

Overview
2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 0.
4 mΩ (typ.
) High forward transfer admittance: |Yfs| = 9.
0 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 12 48 100 364 12 10 150 -55 to150 Unit V V V A W mJ A mJ °C °C Pulse ...


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