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2SK3389

Toshiba Semiconductor
Part Number 2SK3389
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator, DC-DC Convert...
Datasheet PDF File 2SK3389 PDF File

2SK3389
2SK3389

Overview
2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.
8 mΩ (typ.
) High forward transfer admittance: |Yfs| = 70 S (typ.
) Low leakage current: IDSS = 100 µA (VDS = 30 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±30 75 A 300 125 731 75 12.
5 150 −55 to 150 W mJ A mJ °C °C Unit V V V Drain current Dra...


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