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2SK3373

Toshiba Semiconductor
Part Number 2SK3373
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3373 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3373 Switching Regulator and DC-DC Conve...
Datasheet PDF File 2SK3373 PDF File

2SK3373
2SK3373

Overview
2SK3373 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3373 Switching Regulator and DC-DC Converter Applications Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 2.
9 mΩ (typ.
) High forward transfer admittance: |Yfs| = 1.
7 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) (Note 1) Pulse (t = 100 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avala...


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