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2SK3301

Toshiba Semiconductor
Part Number 2SK3301
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK3301 Switching Regulatorand DC-DC Conv...
Datasheet PDF File 2SK3301 PDF File

2SK3301
2SK3301

Overview
2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK3301 Switching Regulatorand DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.
) • High forward transfer admittance: |Yfs| = 0.
65 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement mode: Vth = 2.
4~3.
4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche ener...


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