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2SK3079A

Toshiba Semiconductor
Part Number 2SK3079A
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Appli...
Datasheet PDF File 2SK3079A PDF File

2SK3079A
2SK3079A

Overview
2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Output power: Po = 33.
50dBmW (2.
2 W) (min) Gain: Gp = 13.
50dB (min) Drain Efficiency: ηD = 50.
0% (min) · · · Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 10 3 3 20.
0 150 −45~150 Unit V V A W °C °C Note 1: Tc = 25°C JEDEC ― ― 2-5N1A Marking Type Name JEITA TOSHIBA UD Dot F ** Lot No.
Electrical Characteristics (Ta = 25°C) Characteristics Output power Drain efficiency Power gain Threshold...


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