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2SK2998

Toshiba Semiconductor
Part Number 2SK2998
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type Field Effect Transistor
Published Mar 30, 2005
Detailed Description 2SK2998 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2998 Chopper Regulator, DC−DC Converter ...
Datasheet PDF File 2SK2998 PDF File

2SK2998
2SK2998

Overview
2SK2998 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2998 Chopper Regulator, DC−DC Converter Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 11.
5 Ω (typ.
) z High forward transfer admittance : |Yfs| = 0.
4 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 500 V Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V Gate−source voltage VGSS ±30 V Drain current DC (Note 1) Pulse (Note 1) ID IDP 0.
5 A 1.
5 A Drain power dissipation PD 0.
9 W Channel temperatu...


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