DatasheetsPDF.com

2SK2987

Toshiba Semiconductor
Part Number 2SK2987
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type Field Effect Transistor
Published Mar 30, 2005
Detailed Description 2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2987 DC−DC Converter, Relay Drive and M...
Datasheet PDF File 2SK2987 PDF File

2SK2987
2SK2987

Overview
2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2987 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 4.
5 mΩ (typ.
) l High forward transfer admittance : |Yfs| = 80 S (typ.
) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement−mode : Vth = 1.
3~2.
5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel te...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)