METAL GATE RF SILICON FET
Description
TetraFET
D2004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A K
B (2 pls) E
C 1
2
3
D 5 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G (4 pls)
F
H
J
I
M
N
• SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE
DK
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.
45 1.
65R 45° 16.
51 6.
47 18.
41 1.
52 4.
82 24.
76 1.
52 0.
81R 0.
13 2.
16 Tol.
0.
13 0.
13 5° 0.
76 0.
13 0.
13 0.
13 0.
25 0.
13 0.
13 0.
13 0.
02 0.
13 Inches 0.
254 0.
065R 45° 0.
650 0.
255 0.
725 0.
060 0.
190 0.
975 0.
060 0.
032R 0.
005 0.
085 Tol.
0.
005 0.
005 5° 0.
03 0.
005 0.
005 0.
005 0.
010 0.
005 0.
005 0.
005 0.
001 0.
005 PIN 4 DRAIN 1 GATE 2
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc.
Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 58W 65V ±20V 2A –65 to 150°C 200°C
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk
Prelim.
01/01
D2004UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 28V f = 1GHz IDQ = 0.
4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.
4A 1 0.
36 10 40 20:1 65
Typ.
Max.
Unit
V 0.
4 1 7 mA
mA
V S dB % —
VGS(th) Gate Threshold Voltage *
TOTAL DEVICE
Common Source Power Gain Drain Efficiency VSWR Load Mismatch Tolerance
h
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
PER SIDE
VDS = 0V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = ...
Similar Datasheet
