Schottky barrier diodes
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D121
BAS81; BAS82; BAS83 Schottky barrier diodes
Product specification Supersedes data of 1996 Sep 30 1998 Jun 24
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically-sealed small SMD package • Low diode capacitance.
handbook, halfpage
BAS81; BAS82; BAS83
DESCRIPTION Planar Schottky barrier diode with an integrated protection ring against static discharges.
This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end.
It is suitable for “automatic placement” and as such it can withstand immersion soldering.
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a
APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes.
Cathode indicated by a grey band.
MAM190
Fig.
1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VR BAS81 BAS82 BAS83 IF IFRM IFSM Tstg Tj continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature tp ≤ 1 s; δ ≤ 0.
5 tp = 1 s PARAMETER continuous reverse voltage − − − − − − −65 − 40 50 60 30 150 500 +150 125 V V V mA mA mA °C °C CONDITIONS MIN.
MAX.
UNIT
1998 Jun 24
2
Philips Semiconductors
Product specification
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL VF PARAMETER forward voltage see Fig.
2 IF = 0.
1 mA IF = 1 mA IF = 15 mA IR Cd Note 1.
Pulsed test: tp = 300 µs; δ = 0.
02.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Refer to SOD80 standard mounting conditions.
PARAMETER thermal resistance from junction to ambient note 1 reverse current diode capacitance VR = VRmax; see Fig.
3 f = 1 MHz; VR = 2 V; see Fig.
4 CONDITIONS
BAS81; BAS82; BAS83
MAX.
330 410 1 200 1.
6
UNIT mV mV V nA pF
CONDITIONS
VAL...
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