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BAR63-04

Siemens Semiconductor Group

Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

BAR63-04
BAR63-04

PDF File BAR63-04 PDF File

Description
BAR 63.
.
.
Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 80°C BAR 63-04,-05,-06 TS ≤ 55°C Operating temperature range Storage temperature range Thermal resistance Junction-ambient BAR63 BAR 63-04,-05,-06 1) Symbol BAR 63 50 100 250 250 -55 +150°C -55.
.
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+150°C Unit V mA mW °C °C VR IF Ptot Top Tstg Rth JA ≤ 450 ≤ 540 K/W Junction-soldering point BAR64 BAR63-04,-05,-06 Rth JS ≤ 280 ≤ 380 _________________________ 1)Package mounted on alumina 15mm x 16.
7mm x 0.
7mm Semiconductor Group 1 Edition A01, 23.
02.
95 BAR 63.
.
.
Electrical characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol min.
Value typ.
max.
Unit DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Forward current IF = f (TA*TS) BAR63 V(BR) 50 0.
95 0.
3 0.
21 1.
2 1 75 1.
4 - V nA 50 V 1.
2 pF pF 0.
3 Ω 2 ns nH IR VF CT CT rf τs Ls Forward current IF = f (TA*TS) per each Diode BAR63-04,-05,-06 mA mA TS IF TA TS IF TA TS TA TS TA Semiconductor Group 2 Edition A01, 23.
02.
95 BAR 63.
.
.
Permissible pulse load RthJS = f (tp) BAR63 K/W Permissible pulse load IFmax / IFDC = f (tp) BAR63 IFmax _____ I FDC R thJS tp tp Permissible pulse load RthJS = f (tp) BAR63-04,-05,-06 K/W Permissible pulse load IFmax / IFDC = f (tp) BAR63-04,-05,-06 IF max ______ I DC F R thJS tp t p Semiconductor Group 3 Ed...


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