Zener Diode - Toshiba
Description
CMZB100 to CMZB390
TOSHIBA Zener Diode Silicon Junction
CMZB100 to CMZB390
○ Communication, Control and Measurement Equipment
○ Constant Voltage Regulation
• Power dissipation: P = 1 W • Zener voltage: VZ = 100 to 390 V • Suitable for high-density board assembly due to the
use of a small surface-mount package, M−FLATTM
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol Rating Unit
Power dissipation
P
1 (Note 1) W
Junction temperature
Tj
150
°C
Storage temperature range Tstg −55 to 150 °C
1.
Anode
Note : Using continuously under heavy loads (e.
g.
2.
Cathode
the application of high
temperature/current/voltage and the
JEDEC
―
significant change in temperature, etc.
) may
JEITA
―
cause this product to decrease in the reliability significantly even if the operating
TOSHIBA
3-4E1S
conditions (i.
e.
operating temperature /
Weight: 0.
023 g (typ.
)
current / voltage, etc.
) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test
report and estimated failure rate, etc).
Note 1: Ta = 40°C Device mounted on a glass-epoxy board Board size: 50 mm × 50 mm Land pattern: 6 mm × 6 mm Board thickness: 1.
6 mm
Land Pattern Dimensions (for reference only)
Unit: mm
2.
1
1.
4
3.
0
1.
4
1
Start of commercial production
2010-09
2014-10-09
Electrical Characteristics (Ta = 25°C)
CMZB100 to CMZB390
Type
Min
CMZB100 90 CMZB110 99 CMZB150 135 CMZB180 162 CMZB200 180 CMZB220 198 CMZB240 216 CMZB270 243 CMZB300 270 CMZB330 297 CMZB390 351
Zener Voltage Vz (V)
Measurement
Typ.
Max Current IZ (mA)
100 110
3
Dynamic Resistance
rd (Ω) Measurement
Max Current IZ (mA)
300
3
110 121
3
300
3
150 165
2
450
2
180 198
1.
5
500
1.
5
200 220
1.
5
500
1.
5
220 242
0.
5
5000
0.
5
240 264
0.
5
5000
0.
5
270 297
0.
5
5000
0.
5
300 330
0.
5...
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