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GT50NR21

Toshiba
Part Number GT50NR21
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Jan 30, 2024
Detailed Description Discrete IGBTs Silicon N-Channel IGBT GT50NR21 GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switc...
Datasheet PDF File GT50NR21 PDF File

GT50NR21
GT50NR21

Overview
Discrete IGBTs Silicon N-Channel IGBT GT50NR21 GT50NR21 1.
Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application.
2.
Features (1) 6.
5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3) Enhancement mode (4) High-speed switching IGBT : tf = 0.
20 µs (typ.
) (IC = 50 A) FWD : trr = 0.
50 µs (typ.
) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.
8 V (typ.
) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3.
Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-09...


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