DatasheetsPDF.com

GT50J342

Part Number	GT50J342
Manufacturer	Toshiba
Description	Silicon N-Channel IGBT
Published	Jan 30, 2024
Detailed Description	Discrete IGBTs Silicon N-Channel IGBT GT50J342 1. Applications • Motor Drivers 2. Features (1) Sixth generation (2) Low ...
Datasheet	GT50J342 PDF File

Overview

Discrete IGBTs Silicon N-Channel IGBT GT50J342 1.
Applications • Motor Drivers 2.
Features (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.
5 V (typ.
) (IC = 50 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector 3.
Packaging and Internal Circuit GT50J342 TO-3P(N) 1: Gate 2: Collector (Heat sink) 3: Emitter Start of commercial production 2012-12 1 2014-01-07 Rev.
2.
0 GT50J342 4.
Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage VCES 600 V VGES ±25 Collector current (DC) (Tc = 25) IC 80 A Collector current (DC) ...

Similar Datasheet

GT50J301 silicon N-channel IGBT - Toshiba Semiconductor
GT50J322 silicon N-channel IGBT - Toshiba Semiconductor
GT50J325 Silicon N-Channel IGBT - Toshiba Semiconductor
GT50J327 silicon N-channel IGBT - Toshiba Semiconductor
GT50J328 Silicon N-Channel IGBT - Toshiba Semiconductor
GT50J341 Silicon N-Channel IGBT - Toshiba
GT50J342 Silicon N-Channel IGBT - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)