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GT50J123

Toshiba
Part Number GT50J123
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Jan 30, 2024
Detailed Description Discrete IGBTs Silicon N-Channel IGBT GT50J123 1. Applications • Hard Switching • High-Speed Switching • Power Factor Co...
Datasheet PDF File GT50J123 PDF File

GT50J123
GT50J123

Overview
Discrete IGBTs Silicon N-Channel IGBT GT50J123 1.
Applications • Hard Switching • High-Speed Switching • Power Factor Correction (PFC) 2.
Features (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.
9 V (typ.
) (IC = 50 A, Ta = 25 ) (3) High junction temperature: Tj = 175 (max) 3.
Packaging and Internal Circuit GT50J123 TO-3P(N) 1: Gate 2: Collector (heatsink) 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-10 2018-11-15 Rev.
1.
0 GT50J123 4.
Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current (DC)...


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