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TPCP8513

Toshiba
Part Number TPCP8513
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jan 30, 2024
Detailed Description Bipolar Transistors Silicon NPN Epitaxial Type TPCP8513 TPCP8513 1. Applications • High-Speed Switching • DC-DC Conver...
Datasheet PDF File TPCP8513 PDF File

TPCP8513
TPCP8513

Overview
Bipolar Transistors Silicon NPN Epitaxial Type TPCP8513 TPCP8513 1.
Applications • High-Speed Switching • DC-DC Converters 2.
Features (1) High DC current gain: hFE = 100 to 200 (VCE = 2 V, IC = 0.
4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.
17 V (max) (IC = 1.
2 A, IB = 0.
12 A) (3) High-speed switching: tf = 70 ns (typ.
) (IC = 1.
2 A) 3.
Packaging and Internal Circuit PS-8 1.
Emitter 2.
Emitter 3.
Emitter 4.
Base 5.
Collector 6.
Collector 7.
Collector 8.
Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.
2.
0 TPCP8513 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)...


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