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TK11Q65W

Toshiba
Part Number TK11Q65W
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Dec 30, 2023
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK11Q65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK11Q65W PDF File

TK11Q65W
TK11Q65W

Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK11Q65W 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
35 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.
5 to 3.
5 V (VDS = 10 V, ID = 0.
45 mA) 3.
Packaging and Internal Circuit TK11Q65W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 11.
1 A Drain current (pulsed) (Note 1) IDP 44.
4 Power dissipation (Tc = 25...


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