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2SA2060

Part Number	2SA2060
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Dec 30, 2023
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications DC-DC Converter Applications Str...
Datasheet	2SA2060 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SA2060 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = −0.
3 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.
2 V (max) • High-speed switching: tf = 90 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V DC Collector current IC −2.
0 A Pulse ICP −3.
5 JEDEC ― Base current IB −200 mA JEITA SC-62 Collector power dissipation Junction temperature t = 10 s DC PC 2.
5 W (Note ...

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