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SSM6J825R

Toshiba
Part Number SSM6J825R
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Dec 15, 2023
Detailed Description MOSFETs Silicon P-Channel MOS SSM6J825R 1. Applications • Power Management Switches 2. Features (1) 4.0-V drive (2) Low ...
Datasheet PDF File SSM6J825R PDF File

SSM6J825R
SSM6J825R

Overview
MOSFETs Silicon P-Channel MOS SSM6J825R 1.
Applications • Power Management Switches 2.
Features (1) 4.
0-V drive (2) Low drain-source on-resistance : RDS(ON) = 86 mΩ (max) (@VGS = -4.
0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.
5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3.
Packaging and Pin Assignment TSOP6F SSM6J825R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-12 2021-11-02 Rev.
1.
0 SSM6J825R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS -20 / +10 Drain current (DC) (Note 1) ID...


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