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SSM6J771G

Toshiba
Part Number SSM6J771G
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Dec 15, 2023
Detailed Description MOSFETs Silicon P-Channel MOS SSM6J771G 1. Applications • BATFETs • Power Management Switches 2. Features (1) High VGSS ...
Datasheet PDF File SSM6J771G PDF File

SSM6J771G
SSM6J771G

Overview
MOSFETs Silicon P-Channel MOS SSM6J771G 1.
Applications • BATFETs • Power Management Switches 2.
Features (1) High VGSS voltage : ±12V (2) High VDSS voltage : -20V (3) Low drain-source on-resistance : RDS(ON) = 26 mΩ (typ.
) (@VGS = -4.
5 V,ID = -3.
0A) RDS(ON) = 24 mΩ (typ.
) (@VGS = -8.
0 V,ID = -3.
0A) RDS(ON) = 23 mΩ (typ.
) (@VGS = -8.
5 V,ID = -3.
0A) 3.
Packaging and Pin Assignment SSM6J771G WCSP6C A1.
Gate A2.
Source B1.
Source B2.
Source C1.
Drain C2.
Drain 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current (DC) (Note 1) ID -5.
0 A Drain cu...


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