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SSM6J512NU

Toshiba
Part Number SSM6J512NU
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Dec 15, 2023
Detailed Description MOSFETs Silicon P-Channel MOS SSM6J512NU 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive vo...
Datasheet PDF File SSM6J512NU PDF File

SSM6J512NU
SSM6J512NU

Overview
MOSFETs Silicon P-Channel MOS SSM6J512NU 1.
Applications • Power Management Switches 2.
Features (1) 1.
8 V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 24.
0 mΩ (typ.
) (@VGS = -1.
8 V) RDS(ON) = 18.
3 mΩ (typ.
) (@VGS = -2.
5 V) RDS(ON) = 14.
3 mΩ (typ.
) (@VGS = -4.
5 V) 3.
Packaging and Pin Assignment UDFN6B SSM6J512NU 1,2,5,6: Drain 3: Gate 4: Source ©2015-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-07 2021-09-17 Rev.
2.
0 SSM6J512NU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±10 V Drain c...


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