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SSM5H90ATU

Toshiba
Part Number SSM5H90ATU
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Dec 15, 2023
Detailed Description Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATU 1. Applications • High-Speed Switching 2. Feat...
Datasheet PDF File SSM5H90ATU PDF File

SSM5H90ATU
SSM5H90ATU

Overview
Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATU 1.
Applications • High-Speed Switching 2.
Features (1) Combined an N-channel MOSFET and a diode in one package.
2.
1.
MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.
0 V) RDS(ON) = 89 mΩ (max) (@VGS = 2.
5 V) (2) 2.
5-V gate drive voltage.
2.
2.
Diode Features (1) Low reverse current: IR = 0.
1 µA (typ.
) (@VR = 30 V) 3.
Packaging and Internal Circuit SSM5H90ATU 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain UFV 4.
Absolute Maximum Ratings (Note) 4.
1.
Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source vol...


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