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SSM5G06FE

Toshiba
Part Number SSM5G06FE
Manufacturer Toshiba
Description Silicon Epitaxial Schottky Barrier Diode
Published Dec 14, 2023
Detailed Description SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications...
Datasheet PDF File SSM5G06FE PDF File

SSM5G06FE
SSM5G06FE

Overview
SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications • Combined a P-channel MOSFET and a Schottky barrier diode in one package.
• Optimum for high-density mounting in small packages Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDSS −20 V Gate-Source voltage VGSS ±10 V Drain current DC ID −100 mA Pulse IDP (Note 2) −200 Power dissipation PD (Note 1) 150 mW Channel temperature Tch 150 °C Absolute Maximum Ratings (Ta = 25°C) SBD Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Average forward current Peak on...


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