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MG400V2YMS3

Toshiba
Part Number MG400V2YMS3
Manufacturer Toshiba
Description Silicon Carbide N-Channel MOSFET
Published Dec 13, 2023
Detailed Description High-Power Module Silicon Carbide N-Channel MOSFET MG400V2YMS3 MG400V2YMS3 1. Applications • High-Power Switching • Mo...
Datasheet PDF File MG400V2YMS3 PDF File

MG400V2YMS3
MG400V2YMS3

Overview
High-Power Module Silicon Carbide N-Channel MOSFET MG400V2YMS3 MG400V2YMS3 1.
Applications • High-Power Switching • Motor Controllers (including rail traction) 2.
Features (1) VDSS = 1700 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150 �, built in thermistor.
(3) Enhancement mode.
(4) Electrodes are isolated from metal base plate.
3.
Packaging and Internal Circuit Note: P and N terminal should use one screw to fasten in each and AC terminal should use two screws to fasten.
Note 1: When the thermistor is not used, pin 1 and pin 2 should be electrically connected to pin 12.
©2021-2023 1 Toshiba Electr...


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