DatasheetsPDF.com

2SA2154CT

Toshiba
Part Number 2SA2154CT
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Dec 13, 2023
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT 2SA2154CT General Purpose Amplifier Applications...
Datasheet PDF File 2SA2154CT PDF File

2SA2154CT
2SA2154CT


Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT 2SA2154CT General Purpose Amplifier Applications  High voltage and high current : VCEO = 50V, IC = 100mA (max)  Excellent hFE linearity : hFE (IC = 0.
1 mA) / hFE (IC = 2 mA)= 0.
95 (typ.
)  High hFE : hFE = 120 to 400  Complementary to 2SC6026CT Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 30 mA Collector power dissipation PC 100* mW Junction temperature Storage temperature range Tj 150 °C Tstg 55 t...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)