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SSM6H19NU

Toshiba
Part Number SSM6H19NU
Manufacturer Toshiba
Description DC-DC Converters
Published Jul 19, 2023
Detailed Description Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier SSM6H19NU 1. Applications • DC-DC Converters 2. Featu...
Datasheet PDF File SSM6H19NU PDF File

SSM6H19NU
SSM6H19NU

Overview
Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier SSM6H19NU 1.
Applications • DC-DC Converters 2.
Features (1) N-channel MOSFET and a schottky barrier diode in one package.
2.
1.
MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 160 mΩ (typ.
) (@VGS = 3.
6 V) (2) 1.
8-V gate drive voltage.
2.
2.
Diode Features (1) Low forward voltage: VF = 0.
51 V (typ.
) (@IF = 500 mA) 3.
Packaging and Internal Circuit SSM6H19NU 1.
Anode 2.
N.
C.
3.
Drain 4.
Source 5.
Gate 6.
Cathode UDFN6 4.
Absolute Maximum Ratings (Note) 4.
1.
Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage ...


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