Zener Diode - Toshiba
Description
Applications
Voltage surge protection
TOSHIBA Zener Diode Silicon Epitaxial Planar Type
CSLZ Series
Features
• Small package
Packaging and Internal Circuit
CSLZ Series
1
2
1: Cathode
2: Anode
SL2
Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25°C)
Characteristics Power dissipation
Junction temperature Storage temperature
Symbol PD*1 PD*2 Tj Tstg
Rating
Unit
150
mW
400
mW
150
°C
−55 to 150
°C
Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25°C)
Type No.
Electrostatic discharge voltage *3
Contact
Air
Peak pulse power *4
Peak pulse current*4
Type No.
Electrostatic discharge voltage *3
Contact
Air
Peak pulse power *4
CSLZ5V6 CSLZ6V2 CSLZ6V8
VESD(kV) ± 30 ± 30 ± 30
PPK(W) 32 37 40
IPP(A) 2.
5 2.
5 2.
5
CSLZ12V CSLZ16V CSLZ20V
VESD(kV) ± 20 ± 12 ± 12
PPK(W) 72 87 105
CSLZ8V2
± 30
CSLZ10V
± 30
55
2.
5
CSLZ24V
± 10
117
60
2.
5
CSLZ30V
±8
145
Peak pulse current*4
IPP(A) 2.
5 2.
5 2.
5 2.
5 2.
5
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
*1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm.
*2: Mounted on a glass epoxy circuit board of 25.
4 mm × 25.
4 mm × 1.
6 mmt, Cu pad: 645 mm2
*3: according to IEC61000-4-2
*4: according to IEC61000-4-5, tp = 8 / 20 μs
Start of commercial production
2022-04
© 2022
1
Toshiba Electronic Devices & Storage Corporation
2022-05-24 Rev.
1.
0
CSLZ Series
Electrical Char...
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