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30J322

Part Number	30J322
Manufacturer	Toshiba
Description	Silicon N-Channel IGBT
Published	Dec 19, 2020
Detailed Description	GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESON...
Datasheet	30J322 PDF File

Overview

GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.
25μs (Typ.
) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.
1V (Typ.
) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Unit: mm CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage DC Collector Current 1ms Emitter−Collector Forward DC Current 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range VCES VGES IC ICP IF IFP PC Tj Tstg 600 V ±20 V 30 A 100 30 ...

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