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RN2130MFV

Part Number	RN2130MFV
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Oct 30, 2020
Detailed Description	RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Sw...
Datasheet	RN2130MFV PDF File

Overview

RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost.
 A wide range of resistor values is available for use in various circuits.
 Complementary to the RN1130MFV Equivalent Circuit Unit: mm Absolute Maximum Ratings (Ta = 25°C) 1.
BASE VESM 2.
EMITTER 3.
COLLECTOR JEDEC JEITA TOSHIBA ― ― 1-1...

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RN2130MFV Silicon PNP Transistor - Toshiba

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