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RN2130FV

Part Number	RN2130FV
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Oct 30, 2020
Detailed Description	RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface ...
Datasheet	RN2130FV PDF File

Overview

RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm 0.
22±0.
05 0.
32±0.
05 Built-in bias resistors Simplified circuit design Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1.
2±0.
05 0.
8±0.
05 1 1.
2±0.
05 0.
8±0.
05 0.
4 0.
4 Equivalent Circuit 2 3 0.
13±0.
05 0.
5±0.
05 VESM 1.
BASE 2.
EMITTER 3.
COLLECTOR Maximum Ratings (Ta = 25°C) JEDEC ― Characteristic Symbol Rating Unit JEITA ― Collector-base voltage Collector-emitter voltage TOSHIBA 2-1L1A VCBO −50 V Weight : 0.
0015mg (typ.
) VCEO −50 V Emitter-base voltage VEBO −10 V Co...

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