High Precision 10V IC Reference
Description
FEATURES
Laser trimmed to high accuracy 10.
000 V ±5 mV (L and U models)
Trimmed temperature coefficient 5 ppm/°C maximum, 0°C to 70°C (L model) 10 ppm/°C maximum, −55°C to +125°C (U model)
Excellent long-term stability 25 ppm/1000 hrs (noncumulative)
−10 V reference capability Low quiescent current: 1.
0 mA maximum 10 mA current output capability 3-pin TO-5 package MIL-STD-883 compliant versions available
GENERAL DESCRIPTION
The AD581 is a 3-pin, temperature compensated, monolithic, band gap voltage reference that provides a precise 10.
00 V output from an unregulated input level ranging from 12 V to 30 V.
Laser wafer trimming (LWT) is used to trim both the initial error at +25°C as well as the temperature coefficient, resulting in high precision performance previously available only in expensive hybrids or oven regulated modules.
The 5 mV initial error tolerance and 5 ppm/°C guaranteed temperature coefficient of the AD581L is available in a monolithic voltage reference.
The band gap circuit design used in the AD581 offers several advantages over classical Zener breakdown diode techniques.
Most important, no external components are required to achieve full accuracy and significant stability to low power systems.
In addition, total supply current to the device, including the output buffer amplifier (which can supply up to 10 mA) is typically 750 μA.
The long-term stability of the band gap design is equivalent to selected Zener reference diodes.
The AD581 is recommended for use as a reference for 8-, 10or 12-bit digital-to-analog converters (DACs) that require an external precision reference.
The device is also ideal for all types of analog-to-digital converters (ADCs) up to 14-bit accuracy, either successive approximation or integrating designs, and can generally offer better performance than that provided by standard self-contained references.
High Precision 10 V IC Reference
AD581
FUNCTIONAL BLOCK DIAGRAM
+VS
AD581
VOUT
GND
TO-5 BOTTOM VIEW
Figure 1.
08014-001
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