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TIM0910-15L

Toshiba
Part Number TIM0910-15L
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 20, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 9.5GHz to 10.5GHz ･HIGH GAIN G1dB= 7.0dB at 9.5...
Datasheet PDF File TIM0910-15L PDF File

TIM0910-15L
TIM0910-15L

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.
0dBm at 9.
5GHz to 10.
5GHz ･HIGH GAIN G1dB= 7.
0dB at 9.
5GHz to 10.
5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM0910-15L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 9V IDSset= 4.
0A f = 9.
5 to 10.
5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 30.
0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN.
41.
0 6.
0    -42   TYP.
MAX.
42.
0  7.
0  4.
5 5.
5  ±0.
8 31  -45  4.
5 5.
5  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown...


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