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TIM1213-30L

Part Number	TIM1213-30L
Manufacturer	Toshiba
Description	MICROWAVE POWER GaAs FET
Published	Jun 20, 2020
Detailed Description	MICROWAVE POWER GaAs FET TIM1213-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 12.7GHz to...
Datasheet	TIM1213-30L PDF File

Overview

MICROWAVE POWER GaAs FET TIM1213-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.
0dBm at 12.
7GHz to 13.
2GHz ŋHIGH GAIN G1dB= 5.
5dB at 12.
7GHz to 13.
2GHz ŋLOW INTERMODULATION DISTORTION IM3= -28dBc at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 7.
0A f= 12.
7 to 13.
2GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc Po= 38dBm, f= 5MHz (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance (Rg): 10  MIN.
44.
0 4.
5    -25   TYP.
MAX.
45.
0  5.
5  10.
0 11.
0  0.
8 23  -28  9.
0 10.
1  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Tr...

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TIM1213-30L MICROWAVE POWER GaAs FET - Toshiba

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