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TIM0910-8

Toshiba
Part Number TIM0910-8
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 20, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN G1dB= 6.0dB at 9.5...
Datasheet PDF File TIM0910-8 PDF File

TIM0910-8
TIM0910-8

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.
5dBm at 9.
5GHz to 10.
5GHz ･HIGH GAIN G1dB= 6.
0dB at 9.
5GHz to 10.
5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM0910-8 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS VDS= 9V IDSset= 4.
0A f = 9.
5 to 10.
5GHz UNIT dBm dB A Power Added Efficiency add % Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN.
38.
5 5.
0    TYP.
MAX.
39.
5  6.
0  3.
4 4.
4 22   80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 4.
0A VDS= 3V IDS= 120mA VDS= 3V VGS= 0V VGSO IGS= -120A Rth(c-c) Channel to Case UNIT MIN.
TYP.
MAX.
S  2.
4 ...


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