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TIM0910-4

Toshiba
Part Number TIM0910-4
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 20, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 9.5GHz to 10.5GHz ･HIGH GAIN G1dB= 7.5dB at 9.5...
Datasheet PDF File TIM0910-4 PDF File

TIM0910-4
TIM0910-4

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.
5dBm at 9.
5GHz to 10.
5GHz ･HIGH GAIN G1dB= 7.
5dB at 9.
5GHz to 10.
5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM0910-4 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS VDS= 9V IDSset= 2.
0A f= 9.
5 to 10.
5GHz UNIT dBm dB A Power Added Efficiency add % Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN.
35.
5 6.
5    TYP.
MAX.
36.
5  7.
5  1.
7 2.
2 24   70 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 2.
0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V VGSO IGS= -60A Rth(c-c) Channel to Case UNIT MIN.
TYP.
MAX.
S  1.
2  ...


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