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TIM0910-30L

Toshiba
Part Number TIM0910-30L
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 20, 2020
Detailed Description MICROWAVE POWER GaAs FET TIM0910-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 9.5GHz to ...
Datasheet PDF File TIM0910-30L PDF File

TIM0910-30L
TIM0910-30L

Overview
MICROWAVE POWER GaAs FET TIM0910-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.
0dBm at 9.
5GHz to 10.
5GHz ŋHIGH GAIN G1dB= 7.
0dB at 10.
5GHz to 10.
5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc (Min.
) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 7.
0A f= 9.
5 to 10.
5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc Po= 38dBm, f= 5MHz (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance (Rg): 10  MIN.
44.
0 6.
0    -25   TYP.
MAX.
45.
0  7.
0  10.
0 11.
5  0.
8 25    9.
0 10.
1  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS...


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