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TIM1314-15UL

Toshiba
Part Number TIM1314-15UL
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 19, 2020
Detailed Description MICROWAVE POWER GaAs FET TIM1314-15UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz ...
Datasheet PDF File TIM1314-15UL PDF File

TIM1314-15UL
TIM1314-15UL

Overview
MICROWAVE POWER GaAs FET TIM1314-15UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.
0dBm at 13.
75GHz to 14.
5GHz ŋHIGH GAIN G1dB= 7.
0dB at 13.
75GHz to 14.
5GHz ŋLOW INTERMODULATION DISTORTION IM3= -42dBc(Min.
) at Pout= 30dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 4.
0A f= 13.
75 to 14.
5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test Po= 30dBm, f= 5MHz dBc (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN.
41.
0 6.
0    -42   TYP.
MAX.
42.
0  7.
0  4.
0 5.
0  0.
8 32  -45  4.
0 5.
0  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERIS...


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