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TIM1011-4UL

Toshiba
Part Number TIM1011-4UL
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 19, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.5dB at 10...
Datasheet PDF File TIM1011-4UL PDF File

TIM1011-4UL
TIM1011-4UL

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.
5dBm at 10.
7GHz to 11.
7GHz ･HIGH GAIN G1dB= 9.
5dB at 10.
7GHz to 11.
7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 10V IDSset= 1.
0A f=10.
7 to 11.
7 GHz UNIT dBm dB A Gain Flatness G dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 24.
0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 150  MIN.
35.
5 8.
5    -42   TYP.
MAX.
36.
5  9.
5  1.
1 1.
6  ±0.
8 36  -45  1.
1 1.
6  60 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERIST...


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