Schottky Barrier Diode - Toshiba
Description
Schottky Barrier Diode Silicon Epitaxial
CUS05S30
1.
Applications
• High-Speed Switching
2.
Packaging and Internal Circuit
CUS05S30
1: Cathode 2: Anode
USC
3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 20
Average rectified current
IO (Note 1)
0.
5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
Start of commercial production
2013-09
1 2014-04-07 Rev.
3.
0
4.
Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage Forward voltage Reverse current Reverse current Total capacitance
Symbol
Test Condition
VF(1) VF(2) IR(1) IR(2)
Ct
IF = 0.
1 A (Pulse test) IF = 0.
5 A (Pulse test) VR = 10 V (Pulse test) VR = 30 V (Pulse test) VR = 0 V, f = 1 MHz
Min
CUS05S30
Typ.
Max Unit
0.
28 0.
34 0.
41 0.
47 0.
15 0.
30 55
V V mA mA pF
5.
Marking
Marking Code 8A
Fig.
5.
1 Marking
Part Number CUS05S30
6.
Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes.
This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage co...
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