Molded IGBT
Description
1MB10-120,1MB10D-120,
1200V / 10A Molded Package
Features
· Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.
) · Comprehensive line-up
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply
Molded IGBT
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
1MB10-120 / IGBT
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector DC
Tc=25°C
current
Tc=100°C
1ms Tc=25°C
Max.
power dissipation(IGBT)
Operating temperature
Storage temperature
Screw torque
Symbol VCES VGES IC25 IC100 Icp PC Tj Tstg -
Rating 1200 ±20 16 10 48 135 +150
-40 to +150 50
Unit V V A A A W °C °C N·cm
Equivalent Circuit Schematic
IGBT
C:Collector
G:Gate E:Emitter
1MB10D-120 / IGBT+FWD
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector DC
Tc=25°C
current
Tc=100°C
1ms Tc=25°C
Max.
power dissipation (IGBT)
Max.
power dissipation (FWD)
Operating temperature
Storage temperature
Screw torque
Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg -
Rating 1200
±20 16 10 48
135 85
+150 -40 to +150
50
Unit V V A A A W W °C °C N·cm
IGBT + FWD
C:Collector
G:Gate E:Emitter
1MB10-120, 1MB10D-120
Molded IGBT
Electrical characteristics (at Tj=25°C unless otherwise specified)
1MB10-120 / IGBT Item
Symbol
Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time
Turn-off time
ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf
Characteristics
Min.
Typ.
––
––
5.
5 –
––
– 1200
– 250
– 80
––
––
––
––
Max.
1.
0
20 8.
5 3.
5 – – – 1.
2 0.
6 1.
5 0.
5
1MB10D-120 / IGBT+FWD Item
Symbol
Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage I...
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