Silicon NPN Transistor - Toshiba
Description
2SC2073A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC2073A
Power Amplifier Applications Vertical Output Applications
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 150 V
Collector-emitter voltage
VCEO 150 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 1.
5 A
Base current
IB 0.
5 A
Collector power dissipation
Junction temperature
Ta = 25°C Tc = 25°C
PC Tj
2.
0 W
25 150 °C
1.
Base 2.
Collector 3.
Emitter
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the
JEITA TOSHIBA
SC-67 2-10R1A
reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the
Weight: 1.
7 g (typ.
)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test
report and estimated failure rate, etc).
1 2010-11-26
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol
ICBO IEBO hFE VCE (sat) VBE
fT Cob
Test Conditions
VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 VCE = 10 V, IC = 500 mA IC = 500 mA, IB = 50 mA VCE = 10 V, IC = 500 mA VCE = 10 V, IC = 500 mA VCB = 10 V, IE = 0, f = 1 MHz
Marking
2SC2073A
Min Typ.
Max Unit
― ― 10 μA
― ― 10 μA
40 75 140
― ― 1.
5 V
0.
65 0.
75 0.
85
V
― 4 ― MHz
― 35 ― pF
C2073A
Part No.
(or abbreviation code) Lot No.
Note2
Note2 : A line under a Lot No.
identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Ple...
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