Schottky Barrier Diode - Toshiba
Description
Schottky Barrier Diode Silicon Epitaxial
CUHS20S30
1.
Applications
• High-Speed Switching
2.
Packaging and Internal Circuit
CUHS20S30
1: Cathode 2: Anode
US2H
3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Reverse voltage
VR 30 V
Average rectified current
IO (Note 1)
2
A
Non-repetitive peak forward surge current
IFSM (Note 2)
10
A
Junction temperature
Tj 150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
©2018 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2018-10
2018-10-30 Rev.
1.
0
4.
Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics Forward voltage
Reverse current Total capacitance Note 1: Pulse measurement.
Symbol Note
Test Condition
VF (1) VF (2) VF (3) IR (1) IR (2)
Ct
(Note 1) IF = 500 mA IF = 1 A IF = 2 A
(Note 1) VR = 10 V VR = 30 V VR = 0 V, f = 1 MHz
Min
CUHS20S30
Typ.
Max Unit
0.
25 0.
30 0.
28 0.
34 0.
34 0.
41 170 240 500 390
V
µA pF
5.
Marking
Marking Code 86
Fig.
5.
1 Marking
Part Number CUHS20S30
6.
Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes.
This makes SBDs more susceptible to thermal runaway under high-t...
Similar Datasheet
