N-Channel Enhancement Mode MOSFET
Description
HY5608W/A
N-Channel Enhancement Mode MOSFET
Features
80V/360A
RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V
100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Switching application Power Management for Inverter Systems.
Pin Description
S
D G
TO-247-3L
S
D G
TO-3P-3L
D
G N-Channel MOSFET
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