RF POWER FIELD-EFFECT TRANSISTOR
Description
MRF136
RF POWER FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz.
MAXIMUM RATINGS
ID 2.
5 A
VDSS
65 V
PDISS
50 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 3.
6 °C/W
PACKAGE STYLE .
380 4L FLG
1 = DRAIN 2 = GATE 3 & 4 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V(BR)DSS
ID = 5.
0 mA
VGS = 0 V
IDSS VDS = 28 V
VGS = 0 V
IGSS
VDS = 0 V
VGS = 40 V
VGS(th)
ID = 25 mA
VDS = 10 V
gfs
ID = 250 mA
VDS = 10 V
Ciss Coss Crss
VDS = 28 V
VGS = 0 V
f = 1.
0 MHz
NF VDS = 28 V
ID = 0.
5 A
f = 150 MHz
Gps VDD = 28 V
Pout = 15 W
η IDQ = 25 mA
f = 150 MHz
ψ
VDD = 28 V
Pout = 15 W
f = 150 MHz
IDQ = 25 mA VSWR 30:1 @ ALL PHASE ANGLES
MINIMUM TYPICAL MAXIMUM
65 2.
0 1.
0
1.
0 3.
0 6.
0 250 400
UNITS
V mA µA V mmhos
24
25 pF 5.
5
1.
0 dB
12 16 50 60
dB %
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D ...
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